GBU4D [BL Galaxy Electrical]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | GBU4D |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
GBU4A --- GBU4M
BL
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 4.0 A
SILICON BRIDGE RECTIFIERS
FEATURES
Ideal for printed circuit board
GBU
.933(23.7)
.894(22.7)
Reliable low cost construction utilizing molded
plastic technique
.140(3.56)
.130(3.30)
.185(4.7)
.165(4.2)
.160(4.1)
.140(3.5)
0
45
Plastic materrial has U/L flammability classification
.310(7.9)
.290(7.4)
.085(2.16)
.065(1.65)
.740(18.8)
.720(18.3)
+
+
94V-O
.075(1.9)R.TYP.
_
Mounting position: Any
Glass passivated chip junctions
~
~
+
.080(2.03)
.060(1.52)
.710(18)
.690(17.5)
.100(2.54)
.085(2.16)
.050(1.27)
.040(1.02)
.085(2.18)
.075(1.90)
.190(4.83)
.210(5.33)
.022(.56)
.018(.46)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
GBU GBU GBU GBU GBU GBU GBU
UNITS
4A
50
35
50
4B
100
70
4D
4G
400
280
400
4.0
4J
4K
4M
1000
700
V
V
V
200
140
200
600
420
600
800
560
800
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
1000
Maximum DC blocking voltage
Maximum average forw ard Tc=100
output current @TA=40
(note 1)
A
IF(AV)
3.0
(note 2)
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
A
V
IFSM
150.0
Maximum instantaneous forw ard voltage
at 2.0 A
1.0
VF
IR
A
μ
5.0
Maximum reverse current
@TA=25
500.0
mA
pF
at rated DC blocking voltage @TA=125
Typical junction capacitance per leg (note 3)
100
45
CJ
RθJA
RθJC
TJ
22.0
4.2
Typical thermal resistance per leg
(note 2)
(note 1)
/W
Operating junction temperature range
Storage temperature range
- 55 ---- + 150
- 55 ---- + 150
TSTG
NOTE: 1. Unit case mounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm) AI. Plate.
www.galaxycn.com
2. Units mounted on P.C.B. with 0.5x0.5" (12x12mm) copper pads and 0.375" (9.5mm) lead length.
3. Measured at 1.0 MHz and applied rev erse v oltage of 4.0 v olts.
BLGALAXY ELECTRICAL
1.
Document Number 0287025
RATINGS AND CHARACTERISTIC CURVES
GBU4A --- GBU4M
FIG.1 -- DERATING CURVE FOR OUTPUT RRECTIFIED CURRENT
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
4.0
3.0
10
1.0
2.0
1.0
TJ=25
Pulse Width
=300uS
0.1
.01
0
0
50
100
150
.4
.6
.8
1
1.2
1.4
1.6
TEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
DURGE CURRENT
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
500
T J = 1 2 5
100
150
T
J
=T max.
J
SINGLE SINE-WAVE
(JEDEC METHOD)
120
10
90
60
30
1.0
0.1
1.0 CYCLE
T J = 2 5
1
10
100
.01
0
20
40
60
80
100
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE VOLTAGE
FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER LEG
FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE
1000
TJ=25
f=1.0 MHz
VSIG=50mVp-p
100
10
1
100
40
50-400V
600-1000V
10
.1
.1
1
4
10
100
.01
.1
1
10
100
REVERSE VOLTAGE, VOLTS
t, HEATING TIME, sec.
www.galaxycn.com
2.
BLGALAXY ELECTRICAL
Document Number 0287025
相关型号：
GBU4D-E3/1
DIODE 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode
VISHAY
GBU4D-E3/22
Bridge Rectifier Diode, 1 Phase, 3A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBU, 4 PIN
VISHAY
GBU4DE3-E3
DIODE 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode
VISHAY
GBU4G
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE 50 to 800 Volts CURRENT - 4.0 Amperes)
PANJIT
©2020 ICPDF网 联系我们和版权申明